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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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FZT958 Arkusz danych(PDF) 4 Page - Diodes Incorporated |
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FZT958 Arkusz danych(HTML) 4 Page - Diodes Incorporated |
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4 / 7 page  FZT958 Document number: DS36166 Rev. 6 - 2 4 of 7 www.diodes.com December 2016 © Diodes Incorporated FZT958 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ. Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -400 -600 — V IC = -100µA Collector-Emitter Breakdown Voltage BVCER -400 -600 — V IC = -1µA, RB 1kΩ Collector-Emitter Breakdown Voltage (Note 9) BVCEO -400 -550 — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8 — V IE = -100µA Collector Cut-Off Current ICBO — — <1 — -50 -1 nA µA VCB = -300V VCB = -300V, TA = +100°C Collector Cut-Off Current ICER — <1 -50 nA VCE = -300V, R 1kΩ VCE = -300V, R 1kΩ, TA = +100°C Emitter Cut-Off Current IEBO — <1 -10 nA VEB = -6V DC Current Transfer Static Ratio (Note 9) hFE 100 200 — — IC = -10mA, VCE = -10V 100 200 300 IC = -0.5A, VCE = -10V 10 20 — IC = -1A, VCE = -10V Collector-Emitter Saturation Voltage (Note 9) VCE(SAT) — -100 -150 mV IC = -10mA, IB = -1mA — -150 -200 IC = -100mA, IB = -10mA — -340 -400 IC = -500mA, IB = -100mA Base-Emitter Saturation Voltage (Note 9) VBE(SAT) — -830 -950 mV IC = -0.5A, IB = -100mA Base-Emitter Turn-On Voltage (Note 9) VBE(ON) — -725 -840 mV IC = -0.5A, VCE = -10V Transitional Frequency fT — 85 — MHz IC = -100mA, VCE = -10V, f = 50MHz Output Capacitance COBO — 19 — pF VCB = -20V, f = 1MHz Switching Time tON — 104 — ns VCC = -100V, IC = -500mA, IB1 = -IB2 = -50mA tOFF — 2,400 — Note: 9. Measured under pulsed conditions. Pulse width 300μs. Duty cycle 2%. |
Podobny numer części - FZT958_16 |
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Podobny opis - FZT958_16 |
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