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TPCS8201 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TPCS8201 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCS8201 2003-02-20 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ¾ ¾ ±10 µA Drain cut-OFF current IDSS VDS = 20 V, VGS = 0 V ¾ ¾ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ¾ ¾ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −12 V 15 ¾ ¾ V Gate threshold voltage Vth VDS = 10 V, ID = 200 µA 0.5 ¾ 1.2 V RDS (ON) VGS = 2.0 V, ID = 3.5 A ¾ 48 60 RDS (ON) VGS = 2.5 V, ID = 3.5 A ¾ 31 40 Drain-source ON resistance RDS (ON) VGS = 4 V, ID = 4 A ¾ 22 30 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 5 13 ¾ S Input capacitance Ciss ¾ 1350 ¾ pF Reverse transfer capacitance Crss ¾ 140 ¾ pF Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ¾ 200 ¾ pF Rise time tr ¾ 4 ¾ Turn-ON time ton ¾ 14 ¾ Fall time tf ¾ 15 ¾ Switching time Turn-OFF time toff ¾ 65 ¾ ns Total gate charge (gate-source plus gate-drain) Qg ¾ 18 ¾ nC Gate-source charge Qgs ¾ 12 ¾ nC Gate-drain (“miller”) charge Qgd VDD ≈ 16 V, VGS = 5 V, ID = 5 A ¾ 6 ¾ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP — — — 20 A Forward voltage (diode) VDSF IDR = 5 A, VGS = 0 V — — −1.2 V |
Podobny numer części - TPCS8201 |
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