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MTB020N10RJ3 Arkusz danych(PDF) 4 Page - Cystech Electonics Corp. |
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MTB020N10RJ3 Arkusz danych(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C745J3 Issued Date : 2018.03.14 Revised Date : Page No. : 4/9 MTB020N10RJ3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 10 20 30 40 50 60 024 68 10 VDS, Drain-Source Voltage(V) 10V,9V,8V,7V,6V,5V,4.5V VGS=2.5V 3V 3.5V 4V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 10 100 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 02 46 8 10 IDR, Reverse Drain Current(A) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 40 80 120 160 200 02 4 6 8 10 VGS, Gate-Source Voltage(V) ID=10A Drain-Source On-State Resistance vs Junction Tempearture 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS=10V, ID=10A RDS(ON)@Tj=25°C : 19mΩ typ. |
Podobny numer części - MTB020N10RJ3 |
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Podobny opis - MTB020N10RJ3 |
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