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IRF1010EZ Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części IRF1010EZ
Szczegółowy opis  N-Channel MOSFET Transistor
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF1010EZ Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
IRF1010EZ，IIRF1010EZ
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =250μA
60
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID =250μA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=51A
8.5
mΩ
IGSS
Gate-Source Leakage Current
VGS=±20V
±200
nA
IDSS
Drain-Source Leakage Current
VDS=60V; VGS= 0V
20
μ
A
VSD
Diode forward voltage
IS=51A, VGS = 0 V
1.3
V


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