IRF200P223 datasheet(4/17 Pages) INFINEON

Numer części	IRF200P223

Szczegółowy opis	IR MOSFET - StrongIRFET?

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Producent	INFINEON [Infineon Technologies AG]

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Final Datasheet

V1.0

2017-02-27

IR MOSFET-StrongIRFET™

IRF200P223

4

Table 2

Maximum ratings (at TJ=25°C, unless otherwise specified)

Parameter

Symbol

Values

Unit

Continuous Drain Current

ID

100

A

Continuous Drain Current

ID

71

Pulsed Drain Current 

IDM

400

Maximum Power Dissipation

PD

313

W

Linear Derating Factor

2.1

W/°C

Gate-to-Source Voltage

VGS

± 20

V

Operating Junction and

Storage Temperature Range

TJ

TSTG

-55 to + 175

°C

Soldering Temperature, for 10 seconds

(1.6mm from case)

-

300

Mounting Torque, 6-32 or M3 Screw

-

10 lbf·in (1.1 N·m)

-

Conditions

TC = 25°C, VGS @ 10V

TC = 100°C, VGS @ 10V

TC = 25°C

-

Notes:



Repetitive rating; pulse width limited by max. junction temperature.



Limited by TJmax, starting TJ = 25°C, L = 0.24mH, RG = 50, IAS = 60A, VGS =10V.



ISD  60A, di/dt  2330A/µs, VDDV(BR)DSS, TJ 175°C.



Pulse width  400µs; duty cycle  2%.



Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.



Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.



R is measured at TJ approximately 90°C.



Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V.

Table 4

Avalanche characteristics

Parameter

Symbol

Values

Unit

Single Pulse Avalanche Energy 

EAS(Thermallylimited)

429

mJ

Single Pulse Avalanche Energy 

EAS(Thermallylimited)

541

Avalanche Current 

IAR

See Fig 16, 17, 23a, 23b

A

Repetitive Avalanche Energy 

EAR

mJ

Table 3

Thermal characteristics

Parameter

Symbol

Conditions

Typ.

Max.

Unit

Junction-to-Case 

RJC

TJ approximately 90°C

-

0.48

°C/W

Case-to-Sink, Flat Greased Surface

RCS

-

0.24

-

Junction-to-Ambient

RJA

-

40

Min.

-

2

Maximum ratings and thermal characteristics

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