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IRF200P223 Arkusz danych(PDF) 4 Page - Infineon Technologies AG |
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IRF200P223 Arkusz danych(HTML) 4 Page - Infineon Technologies AG |
4 / 17 page Final Datasheet V1.0 2017-02-27 IR MOSFET-StrongIRFET™ IRF200P223 4 Table 2 Maximum ratings (at TJ=25°C, unless otherwise specified) Parameter Symbol Values Unit Continuous Drain Current ID 100 A Continuous Drain Current ID 71 Pulsed Drain Current IDM 400 Maximum Power Dissipation PD 313 W Linear Derating Factor 2.1 W/°C Gate-to-Source Voltage VGS ± 20 V Operating Junction and Storage Temperature Range TJ TSTG -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) - 300 Mounting Torque, 6-32 or M3 Screw - 10 lbf·in (1.1 N·m) - Conditions TC = 25°C, VGS @ 10V TC = 100°C, VGS @ 10V TC = 25°C TC = 25°C TC = 25°C - - - - Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.24mH, RG = 50, IAS = 60A, VGS =10V. ISD 60A, di/dt 2330A/µs, VDDV(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V. Table 4 Avalanche characteristics Parameter Symbol Values Unit Single Pulse Avalanche Energy EAS(Thermallylimited) 429 mJ Single Pulse Avalanche Energy EAS(Thermallylimited) 541 Avalanche Current IAR See Fig 16, 17, 23a, 23b A Repetitive Avalanche Energy EAR mJ Table 3 Thermal characteristics Parameter Symbol Conditions Typ. Max. Unit Junction-to-Case RJC TJ approximately 90°C - 0.48 °C/W Case-to-Sink, Flat Greased Surface RCS - 0.24 - Junction-to-Ambient RJA - - 40 Min. - - - 2 Maximum ratings and thermal characteristics Maximum ratings and thermal characteristics |
Podobny numer części - IRF200P223 |
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Podobny opis - IRF200P223 |
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