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SZNUD3160DMT1G Arkusz danych(PDF) 2 Page - ON Semiconductor |
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SZNUD3160DMT1G Arkusz danych(HTML) 2 Page - ON Semiconductor |
2 / 10 page NUD3160, SZNUD3160 www.onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Rating Value Unit VDSS Drain−to−Source Voltage – Continuous (TJ = 125°C) 60 V VGSS Gate−to−Source Voltage – Continuous (TJ = 125°C) 12 V ID Drain Current – Continuous (TJ = 125°C) Minimum copper, double sided board, TA = 80°C SOT−23 SC74 Single device driven SC74 Both devices driven 1 in2 copper, double sided board, TA = 25°C SOT−23 SC74 Single device driven SC74 Both devices driven 158 157 132 ea 272 263 230 ea mA EZ Single Pulse Drain−to−Source Avalanche Energy (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 200 mJ PPK Peak Power Dissipation, Drain−to−Source (Notes 1 and 2) (TJ Initial = 85°C) 20 W ELD1 Load Dump Pulse, Drain−to−Source (Note 3) RSOURCE = 0.5 W, T = 300 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 60 V ELD2 Inductive Switching Transient 1, Drain−to−Source (Waveform: RSOURCE = 10 W, T = 2.0 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 100 V ELD3 Inductive Switching Transient 2, Drain−to−Source (Waveform: RSOURCE = 4.0 W, T = 50 ms) (For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C) 300 V Rev−Bat Reverse Battery, 10 Minutes (Drain−to−Source) (For Relay’s Coils/Inductive Loads of 80 W or more) −14 V Dual−Volt Dual Voltage Jump Start, 10 Minutes (Drain−to−Source) 28 V ESD Human Body Model (HBM) According to EIA/JESD22/A114 Specification 2000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. |
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