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SZNUD3160DMT1G Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części SZNUD3160DMT1G
Szczegółowy opis  Industrial Inductive Load Driver
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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NUD3160, SZNUD3160
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MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Symbol
Rating
Value
Unit
VDSS
Drain−to−Source Voltage – Continuous (TJ = 125°C)
60
V
VGSS
Gate−to−Source Voltage – Continuous (TJ = 125°C)
12
V
ID
Drain Current – Continuous (TJ = 125°C)
Minimum copper, double sided board, TA = 80°C
SOT−23
SC74 Single device driven
SC74 Both devices driven
1 in2 copper, double sided board, TA = 25°C
SOT−23
SC74 Single device driven
SC74 Both devices driven
158
157
132 ea
272
263
230 ea
mA
EZ
Single Pulse Drain−to−Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
200
mJ
PPK
Peak Power Dissipation, Drain−to−Source (Notes 1 and 2)
(TJ Initial = 85°C)
20
W
ELD1
Load Dump Pulse, Drain−to−Source (Note 3)
RSOURCE = 0.5 W, T = 300 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
60
V
ELD2
Inductive Switching Transient 1, Drain−to−Source
(Waveform: RSOURCE = 10 W, T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
100
V
ELD3
Inductive Switching Transient 2, Drain−to−Source
(Waveform: RSOURCE = 4.0 W, T = 50 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (TJ Initial = 85°C)
300
V
Rev−Bat
Reverse Battery, 10 Minutes (Drain−to−Source)
(For Relay’s Coils/Inductive Loads of 80 W or more)
−14
V
Dual−Volt
Dual Voltage Jump Start, 10 Minutes (Drain−to−Source)
28
V
ESD
Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
2000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.


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