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1N3208 Arkusz danych(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Numer części 1N3208
Szczegółowy opis  Silicon Standard Recovery Diode
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Producent  GENESIC [GeneSiC Semiconductor, Inc.]
Strona internetowa  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

1N3208 Arkusz danych(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  1N3208_16 Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. 1N3208_16 Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. 1N3208_16 Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 50 V - 300 V
IF = 15 A
Features
• High Surge Capability
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
1N3208 (R) 1N3209 (R)
Unit
Repetitive peak reverse voltage
VRRM
50
100
V
• Types from 50 V to 300 V VRRM
2. Reverse polarity (R): Stud is anode.
1N3208 thru 1N3211R
1N3211 (R)
200
1N3210 (R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified
Silicon Standard
Recovery Diode
Conditions
300
pp
g
RMS reverse voltage
VRMS
35
70
V
DC blocking voltage
VDC
50
100
V
Continuous forward current
IF
15
15
A
Operating temperature
Tj
-55 to 150 -55 to 150
°C
Storage temperature
Tstg
-55 to 150 -55 to 150
°C
Parameter
Symbol
1N3208 (R) 1N3209 (R)
Unit
Diode forward voltage
1.5
1.5
10
10
μA
10
10
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.65
0.65
°C/W
10
A
297
Reverse current
IR
VF
297
1N3211 (R)
10
10
VR = 50 V, Tj = 25 °C
IF = 15 A, Tj = 25 °C
TC ≤ 150 °C
Conditions
140
297
297
-55 to 150
15
15
-55 to 150
0.65
1.5
1.5
10
IF,SM
1N3210 (R)
0.65
VR = 50 V, Tj = 150 °C
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-55 to 150
-55 to 150
TC = 25 °C, tp = 8.3 ms
210
300
200
Surge non-repetitive forward
current, Half Sine Wave
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1


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