2SC2334 datasheet(1/1 Pages) ETC

Numer części	2SC2334

Szczegółowy opis	Silicon NPN Transistors

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Power Transistors

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2SC2334

Silicon NPN Transistors

Features

B C E

﹒With TO-220 package

﹒Complement to type 2SA1010

﹒For high speed switching industrial use

Absolute Maximum Ratings Tc=25

SYMBOL

PARAMETER

RATING

UNIT

VCBO

Collector to base voltage

150

V

VCEO

Collector to emitter voltage

100

V

VEBO

Emitter to base voltage

7

V

ICP

Peak collector current

15

A

IC

Collector current

7

A

PC

Collector power dissipation

40

W

Tj

Junction temperature

150

Tstg

Storage temperature

-55~150

TO-220

Electrical Characteristics Tc=25

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

ICBO

Collector-base cut-off current

VCB=100V; IE=0

10

A

IEBO

Emitter-base cut-off current

VEB=5V; IC=0

10

A

ICEO

Collector-emitter cut-off current

VCBO

Collector-base breakdown voltage

V(BR)ceo

Collector-emitter breakdown voltage

IC=200mA; IB=0

100

V

VEBO

Emitter-base breakdown voltage

VCE(sat-1)

Collector-emitter saturation voltages

IC=5A; IB=0.5A

0.6

V

VCE(sat-2)

Collector-emitter saturation voltages

hFE-1

Forward current transfer ratio

IC=3A; VCE=5V

40

240

hFE-2

Forward current transfer ratio

IC=0.5A; VCE=5V

40

hFE-3

Forward current transfer ratio

IC=5A; VCE=5V

20

VBE(sat)1

Base-emitter saturation voltages

IC=5A; IB=0.5A

1.5

V

ton

Turn-on time

0.5

s

tstg

Storage time

0.5

s

tf

Fall time

VCC=50V IC=5A

IB1=-IB2=0.5A

RL=50

1.5

s

hFE-2 classification

R

O

Y

40-80

70-140

120-240

JMnic

Podobny numer części - 2SC2334

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NEC	2SC2334	116Kb / 6P	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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