SI6404DQ datasheet(2/4 Pages) VISHAY

Numer części	SI6404DQ

Szczegółowy opis	N-Channel 30-V (D-S) MOSFET

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Si6404DQ

Vishay Siliconix

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Document Number: 71440

S-03483—Rev. A, 16-Apr-01

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.6

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

VDS = 24 V, VGS = 0 V

1

m

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V, TJ = 70_C

10

mA

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 10 V

20

A

VGS = 10 V, ID = 11 A

0.0073

0.009

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 10 A

0.0084

0.010

W

DS(on)

VGS = 2.5 V, ID = 8.8 A

0.0116

0.014

W

Forward Transconductancea

gfs

VDS = 10 V, ID = 11 A

27

S

Diode Forward Voltagea

VSD

IS = 1.5 A, VGS = 0 V

0.72

1.1

V

Dynamicb

Total Gate Charge

Qg

32

48

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 4.5 V, ID = 11 A

8.1

nC

Gate-Drain Charge

Qgd

10

Gate Resistance

Rg

7.5

W

Turn-On Delay Time

td(on)

35

55

Rise Time

tr

VDD = 15 V, RL = 15 W

35

55

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 4.5 V, RG = 6 W

100

150

ns

Fall Time

tf

50

75

Source-Drain Reverse Recovery Time

trr

IF = 1.5 A, di/dt = 100 A/ms

40

85

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

6

12

18

24

30

0.0

0.5

1.0

1.5

2.0

2.5

0

6

12

18

24

30

0

2468

10

VGS = 10 thru 3 V

TC = 125_C

–55

_C

25

_C

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

2 V

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