FEATURES

D TrenchFETr Power MOSFET

D New Low Thermal Resistance

D PowerPAKr 1212-8 Package with

Low 1.07-mm Profile

APPLICATIONS

D Primary Side Switch

D Synchronous Rectification

RoHS

COMPLIANT

Available

Si7120DN

Vishay Siliconix

Document Number: 72771

S-51128—Rev. D, 13-Jun-05

www.vishay.com

1

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY

60

10

60

8.2

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

3.30 mm

3.30 mm

PowerPAK 1212-8

Bottom View

N-Channel MOSFET

G

D

S

Ordering Information: Si7120DN-T1

Si7120DN-T1—E3 (Lead (Pb)-Free)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

"20

V

10

6.3

8.0

5.1

A

Pulsed Drain Current

40

A

3.2

1.3

Single Avalanche Current

L = 0 1 mH

22

Single Avalanche Energy

L = 0.1 mH

24

mJ

3.8

1.5

W

2.4

1.0

W

Operating Junction and Storage Temperature Range

−55 to 150

_C

260

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t v 10 sec

R

26

33

Steady State

65

81

_C/W

Maximum Junction-to-Case (Drain)

Steady State

1.9

2.4

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequate bottom side solder interconnection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.