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STGP7NB60FD Arkusz danych(PDF) 2 Page - STMicroelectronics

Numer części STGP7NB60FD
Szczegółowy opis  N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT
Download  11 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP7NB60FD Arkusz danych(HTML) 2 Page - STMicroelectronics

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STGP7NB60FD - STGB7NB60FD
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ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS =0)
600
V
VGE
Gate-Emitter Voltage
±20
V
IC
Collector Current (continuous) at TC = 25°C
14
A
IC
Collector Current (continuous) at TC = 100°C
7A
ICM ( )
Collector Current (pulsed)
56
A
PTOT
Total Dissipation at TC = 25°C
80
W
Derating Factor
0.64
W/°C
Tstg
Storage Temperature
– 55 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
Rthj-case
Thermal Resistance Junction-case Max
1.56
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitter Breakdown
Voltage
IC = 250 µA, VGE =0
600
V
ICES
Collector cut-off
(VGE =0)
VCE = Max Rating, TC =25 °C
50
µA
VCE = Max Rating, TC = 125 °C
100
µA
IGES
Gate-Emitter Leakage
Current (VCE =0)
VGE =± 20V, VCE = 0
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE =VGE,IC = 250 µA
35
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE =15V,IC =7 A
2.0
2.4
V
VGE =15V,IC=7 A, Tj =125°C
1.6
V


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