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2SJ246S Arkusz danych(PDF) 5 Page - Hitachi Semiconductor |
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2SJ246S Arkusz danych(HTML) 5 Page - Hitachi Semiconductor |
5 / 7 page 200 100 50 20 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 Reverse Drain Current I (A) DR di/dt = 50 A/µs, Ta = 25°C V = 0, Pulse test GS Body to Drain Diode Reverse Recovery Time 10000 5000 2000 1000 500 200 100 0 –10 –20 –30 –40 –50 Drain to Source Voltage V (V) DS V = 0 f = 1 MHz GS Ciss Coss Crss Typical Capacitance vs. Drain to Source Voltage 0 –20 –40 –60 –80 0 –8 –16 –24 –32 –40 Gate Charge Qg (nc) V = –25 V –10 V DD 0 –4 –8 –12 –16 –20 –100 VGS VDS I = –7 A D V = –10 V –25 V DD Dynamic Input Characteristics 500 200 100 50 20 10 5 –0.1 –0.2 –0.5 –1 –2 –5 –10 Drain Current I (A) D V = –10 V, PW = 2 µs, V = –30 V, duty 1 % GS DD td(on) td(off) tf tr Switching Characteristics < = : 2SJ246 L , 2SJ246 S |
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