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TP0610KL Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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TP0610KL Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 4 page TP0610KL/BS250KL Vishay Siliconix New Product Document Number: 72712 S-40244—Rev. A, 16-Feb-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.3 0.6 0.9 1.2 1.5 1.8 −50 −25 0 25 50 75 100 125 150 On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) VGS = 10 V @ 500 mA VGS = 4.5 V @ 25 mA 0 3 6 9 12 15 0.0 0.3 0.6 0.9 1.2 1.5 1.8 ID = 500 mA Gate Charge Qg − Total Gate Charge (nC) 0 4 8 12 16 20 0 200 400 600 800 1000 On-Resistance vs. Drain Current ID − Drain Current (mA) VGS = 4.5 V VGS = 10 V 0 8 16 24 32 40 0 5 10 15 20 25 Capacitance VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VGS = 0 V VGS = 5 V VDS = 30 V VDS = 48 V For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. 0 2 4 6 8 10 02468 10 On-Resistance vs. Gate-Source Voltage VGS − Gate-to-Source Voltage (V) ID = 500 mA ID = 200 mA 1.2 1.5 1 100 1000 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 125_C Source-Drain Diode Forward Voltage VSD − Source-to-Drain Voltage (V) 10 TJ = −55_C VGS = 0 V |
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