2N4401 datasheet(1/8 Pages) ONSEMI

Numer części	2N4401

Szczegółowy opis	General Purpose Transistors

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June, 2004 − Rev. 1

1

Publication Order Number:

2N4401/D

2N4401

Preferred Device

General Purpose

Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

VCEO

40

Vdc

Collector − Base Voltage

VCBO

60

Vdc

Emitter − Base Voltage

VEBO

6.0

Vdc

Collector Current − Continuous

IC

600

mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation

@ TC = 25°C

Derate above 25

°C

PD

1.5

12

W

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Ambient

RqJA

200

°C/W

Thermal Resistance,

Junction−to−Case

RqJC

83.3

°C/W

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

TO−92

CASE 29

STYLE 1

3

2

1

Preferred devices are recommended choices for future use

and best overall value.

Y

= Year

WW

= Work Week

MARKING

DIAGRAM

2N

4401

YWW

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

COLLECTOR

3

2

BASE

1

EMITTER

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