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IRF7338 Arkusz danych(PDF) 1 Page - International Rectifier |
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IRF7338 Arkusz danych(HTML) 1 Page - International Rectifier |
1 / 12 page Max. N-Channel P-Channel VDS Drain-to-Source Voltage 12 -12 ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 6.3 -3.0 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 5.2 -2.5 IDM Pulsed Drain Current 26 -13 PD @TA = 25°C Power Dissipation 2.0 W PD @TA = 70°C Power Dissipation 1.3 Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ±12 ± 8.0 V TJ, TSTG Junction and Storage Temperature Range °C N-Ch P-Ch VDSS 12V -12V RDS(on) 0.034Ω 0.150Ω HEXFET® Power MOSFET 6/2/03 IRF7338 Description www.irf.com 1 These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique s. Parameter Units A Absolute Maximum Ratings -55 to + 150 l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel SO-8 D1 N-CHANNEL MOSFET P-CHANNEL MOSFET D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 62.5 °C/W Thermal Resistance PD - 94372C |
Podobny numer części - IRF7338 |
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Podobny opis - IRF7338 |
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