2001-07-05

Page 2

SPP11N60C3, SPB11N60C3

SPI11N60C3

Preliminary data

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Characteristics

Thermal resistance, junction - case

-

-

1

K/W

Thermal resistance, junction - ambient, leaded

-

-

62

SMD version, device on PCB:

@ min. footprint

-

-

-

35

62

-

Linear derating factor

-

-

1

W/K

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s

-

-

260

°C

Static Characteristics

Drain-source breakdown voltage

600

-

-

V

Drain-source avalanche breakdown voltage

-

700

-

2.1

3

3.9

Zero gate voltage drain current

-

-

-

-

25

250

µA

Gate-source leakage current

-

-

100

nA

Drain-source on-state resistance

-

-

0.34

1.1

0.38

1.22

Ω

Gate input resistance

f = 1 MHz, open drain

-

0.86

-

1Repetitve avalanche causes additional power losses that can be calculated asP

2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.