SI4860DY datasheet(4/4 Pages) VISHAY

Numer części	SI4860DY

Szczegółowy opis	N-Channel Reduced Qg, Fast Switching MOSFE

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Producent	VISHAY [Vishay Siliconix]

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Si4860DY

Vishay Siliconix

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Document Number: 71752

S-03662—Rev. C, 14-Apr-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

- 0.9

- 0.6

- 0.3

0.0

0.3

0.6

- 50

- 25

0

25

50

75

100

125

150

ID = 250 mA

Threshold Voltage

TJ - Temperature (_C)

10-3

10-2

1

10

600

10-1

10-4

100

0.001

0

1

200

80

120

10

0.01

Single Pulse Power

Time (sec)

40

160

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 67_C/W

3. TJM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

10-3

10-2

110

10-1

10-4

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Foot

Square Wave Pulse Duration (sec)

0.1

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Podobny opis - SI4860DY

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