SI4336DY-T1 datasheet(1/5 Pages) VISHAY

Numer części	SI4336DY-T1

Szczegółowy opis	N-Channel 30-V (D-S) MOSFET

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FEATURES

D Ultra Low On-Resistance Using High Density

TrenchFETr Gen II Power MOSFET Technology

D Qg Optimized

D 100% Rg Tested

APPLICATIONS

D Synchronous Buck Low-Side

− Notebook

− Server

− Workstation

D Synchronous Rectifier, POL

Si4336DY

Vishay Siliconix

Document Number: 72417

S-41795—Rev. B, 04-Oct-04

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

Qg (Typ)

30

0.00325 @ VGS = 10 V

25

36

30

0.0042 @ VGS = 4.5 V

22

36

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4336DY

Si4336DY-T1 (with Tape and Reel)

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

25

17

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

20

13

Pulsed Drain Current (10 ms Pulse Width)

IDM

70

A

Continuous Source Current (Diode Conduction)a

IS

2.9

1.3

Avalanche Current

L = 0.1 mH

IAS

50

Maximum Power Dissipationa

TA = 25_C

PD

3.5

1.6

W

Maximum Power Dissipationa

TA = 70_C

PD

2.2

1

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 10 sec

R

29

35

Maximum Junction-to-Ambienta

Steady State

RthJA

67

80

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

13

16

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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