SI4808DY datasheet(4/5 Pages) VISHAY

Numer części	SI4808DY

Szczegółowy opis	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4808DY

Vishay Siliconix

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Document Number: 71157

S-03951—Rev. B, 26-May-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

MOSFET

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0.01

0.02

0.03

0.04

0

2468

10

TJ = 150_C

TJ = 25_C

ID = 7.5 A

20

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

0

30

50

10

20

Single Pulse Power

Time (sec)

40

10-3

10-2

1

10

600

10-1

10-4

100

- 0.8

- 0.6

- 0.4

- 0.2

- 0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 mA

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Threshold Voltage

TJ - Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 93_C/W

3. TJM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

1

100

600

10

10-1

10-2

10-3

Podobny numer części - SI4808DY

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VBsemi Electronics Co.,...	SI4808DY-T1-E3	1Mb / 9P	Dual N-Channel 30 V (D-S) MOSFET

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