2N3771 2N3772

3

Motorola Bipolar Power Transistor Device Data

Figure 2. Thermal Response — 2N3771, 2N3772

t, TIME (ms)

1.0

0.01

0.02

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

2000

θJC(t) = r(t) θJC

θJC = 0.875°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

0.02

1000

40

1.0

Figure 3. Active–Region Safe Operating Area

— 2N3771, 2N3772

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

30

20

10

2.0

2.0

3.0

5.0

10

30

50

70 100

7.0

dc

5.0

7.0

3.0

100

µs

1.0 ms

20

2N3771

2N3772, (dc)

40

µs

100 ms

500 ms

PULSE CURVES APPLY

FOR ALL DEVICES

2N3771

2N3772

200

µs

BONDING WIRE LIMITED

THERMALLY LIMITED

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW RATED VCEO

TC = 25°C

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation:

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

Figure 3 is based on JEDEC registered Data. Second

breakdown pulse limits are valid for duty cycles to 10%

provided TJ(pk) < 200_C. TJ(pk) may be calculated from the

data of Figure 2. Using data of Figure 2 and the pulse power

limits of Figure 3, TJ(pk) will be found to be less than TJ(max)

for pulse widths of 1 ms and less. When using Motorola

transistors, it is permissible to increase the pulse power limits

until limited by TJ(max).

Figure 4. Switching Time Test Circuit

+11 V

25

µs

0

– 9.0 V

RB

– 4 V

D1

SCOPE

VCC

+ 30 V

RC

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

51

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS

10

0.3

Figure 5. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

5.0

2.0

1.0

0.5

0.2

0.1

0.01

0.5 0.7 1.0

2.0

5.0 7.0

30

VCC = 30

IC/IB = 10

TJ = 25°C

0.05

td

tr

3.0

0.02

10

20

VBE(off) = 5.0 V