2N4920 datasheet(1/8 Pages) ONSEMI

Numer części	2N4920

Szczegółowy opis	GENERAL.PURPOSE POWER TRANSISTORS

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Medium-Power Plastic PNP

Silicon Transistors

...designed for driver circuits, switching, and amplifier

applications. These high–performance plastic devices feature:

• Low Saturation Voltage —

VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp

• Excellent Power Dissipation Due to Thermopad Construction —

PD = 30 W @ TC = 25_C

• Excellent Safe Operating Area

• Gain Specified to IC = 1.0 Amp

• Complement to NPN 2N4921, 2N4922, 2N4923

*MAXIMUM RATINGS

Ratings

Symbol

2N4918

2N4919

2N4920

Unit

Collector–Emitter Voltage

VCEO

40

60

80

Vdc

Collector–Base Voltage

VCB

40

60

80

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous (1)

IC*

1.0

3.0

Adc

Base Current

IB

1.0

Adc

Total Power Dissipation @ TC = 25°C

Derate above 25

_C

PD

30

0.24

Watts

W/

_C

Operating & Storage Junction

Temperature Range

TJ, Tstg

–65 to +150

_C

THERMAL CHARACTERISTICS (2)

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

4.16

_C/W

*Indicates JEDEC Registered Data for 2N4918 Series.

(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.

The 3.0 Amp maximum value is based upon actual current–handling capability of the

device (See Figure 5).

(2) Recommend use of thermal compound for lowest thermal resistance.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor)

April, 2002 – Rev. 10

1

Publication Order Number:

2N4918/D

2N4918

thru

2N4920

*ON Semiconductor Preferred Device

3 AMPERE

GENERAL–PURPOSE

POWER TRANSISTORS

40–80 VOLTS

30 WATTS

*

CASE 77–09

TO–225AA TYPE

3

2 1

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

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