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SSM2301N Arkusz danych(PDF) 2 Page - List of Unclassifed Manufacturers

Numer części SSM2301N
Szczegółowy opis  P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
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Producent  ETC1 [List of Unclassifed Manufacturers]
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SSM2301N Arkusz danych(HTML) 2 Page - List of Unclassifed Manufacturers

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SSM2301N
Electrical Characteristics @ Tj=25
oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20
-
-
V
∆BV
DSS/∆T j
Breakdown Voltage Temperature Coefficient
Reference to 25°C, ID=-1mA
-
-0.1
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-5V, ID=-2.8A
-
-
130
m
VGS=-2.8V, ID=-2.0A
-
-
190
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5
-
-
V
gfs
Forward Transconductance
VDS=-5V, ID=-2.8A
-
4.4
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=55
oC)
VDS=-16V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=-2.8A
-
5.2
-
nC
Qgs
Gate-Source Charge
VDS=-6V
-
1.36
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-5V
-
0.6
-
nC
td(on)
Turn-on Delay Time
2
VDS=-6V
-
25
-
ns
tr
Rise Time
ID=-1A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=6Ω ,VGS=-5V
-
70
-
ns
tf
Fall Time
RD=6Ω
-60
-
ns
Ciss
Input Capacitance
VGS=0V
-
295
-
pF
Coss
Output Capacitance
VDS=-6V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=-1.2V
-
-
-1.6
A
ISM
Pulsed Source Current ( Body Diode )
1
-
-
-10
A
VSD
Forward On Voltage
2
Tj=25°C, IS=-1.6A, VGS=0V
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t < 5 sec.
± 8V
±100
Rev.2.02 3/11/2004


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