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SSM2301N Arkusz danych(PDF) 1 Page - List of Unclassifed Manufacturers

Numer części SSM2301N
Szczegółowy opis  P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
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SSM2301N Arkusz danych(HTML) 1 Page - List of Unclassifed Manufacturers

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SSM2301N
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
BV DSS
-20V
Small package outline
RDS(ON)
130m
Surface-mount device
ID
-2.3A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID @ TA=25°C
ID @ TA=70°C
IDM
A
PD @ TA=25°C
W/°C
TSTG
TJ
Symbol
Value
Unit
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
100
°C/W
Rating
- 20
± 12
-2.3
A
0.01
1.25
W
-55 to 150
°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
-1.5
A
Pulsed Drain Current
1,2
-10
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
-55 to 150
°C
Linear Derating Factor
Thermal Data
Power MOSFETs from Silicon Standard Corp. provide the
designer with the best combination of fast switching, low
on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial and
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
D
G
S
SOT-23
Rev.2.02 3/11/2004


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