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BC557B Arkusz danych(PDF) 5 Page - ON Semiconductor

Numer części BC557B
Szczegółowy opis  Amplifier Transistors(PNP Silicon)
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BC557B Arkusz danych(HTML) 5 Page - ON Semiconductor

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BC556,B BC557A,B,C BC558B
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 13. Thermal Response
t, TIME (ms)
1.0
2.0
5.0
1.0
0.5
0.2
0.1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0 k
2.0 k
5.0 k
10 k
Figure 14. Active Region — Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (V)
–200
–1.0
TA = 25°C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
Z
θJC(t) = (t) RθJC
R
θJC = 83.3°C/W MAX
Z
θJA(t) = r(t) RθJA
R
θJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
–100
–50
–10
–5.0
–2.0
–5.0
–10
–30 –45 –65
–100
1 s
BC558
BC557
BC556
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 13. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.


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