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BC807-25LT1G Arkusz danych(PDF) 1 Page - ON Semiconductor

Numer części BC807-25LT1G
Szczegółowy opis  General Purpose Transistors(PNP Silicon)
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© Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 5
Publication Order Number:
BC807−16LT1/D
1
BC807−16LT1,
BC807−25LT1, BC807−40LT1
General Purpose
Transistors
PNP Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
VCEO
−45
V
Collector - Base Voltage
VCBO
−50
V
Emitter - Base Voltage
VEBO
−5.0
V
Collector Current − Continuous
IC
−500
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
− 55 to
+150
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
SOT−23
CASE 318
STYLE 6
MARKING
DIAGRAM
3
12
xxxD
1
2
3
http://onsemi.com
xxx
= 5A (BC807−16LT1)
D
= Date Code
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
5B1 (BC807−25LT1)
5C (BC807−40LT1)


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