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BC847BWT1 Arkusz danych(PDF) 1 Page - ON Semiconductor

Numer części BC847BWT1
Szczegółowy opis  General Purpose Transistors(NPN Silicon)
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Symbol
BC846
BC847
BC848
Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
VCBO
80
50
30
V
Emitter – Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current — Continuous
IC
100
100
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
150
mW
Thermal Resistance, Junction to Ambient
RqJA
833
°C/W
Total Device Dissipation
PD
2.4
mW/
°C
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
BC846 Series
(IC = 10 mA)
BC847 Series
BC848 Series
V(BR)CEO
65
45
30
V
Collector – Emitter Breakdown Voltage
BC846 Series
(IC = 10 µA, VEB = 0)
BC847 Series
BC848 Series
V(BR)CES
80
50
30
V
Collector – Base Breakdown Voltage
BC846 Series
(IC = 10 mA)
BC847 Series
BC848 Series
V(BR)CBO
80
50
30
V
Emitter – Base Breakdown Voltage
BC846 Series
(IE = 1.0 mA)
BC847 Series
BC848 Series
V(BR)EBO
6.0
6.0
5.0
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
15
5.0
nA
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by BC846AWT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC846AWT1,BWT1
BC847AWT1,BWT1,
CWT1
BC848AWT1,BWT1,
CWT1
CASE 419–02, STYLE 3
SOT–323/SC–70
1
2
3
© Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER


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