H02N60I datasheet(2/6 Pages) HSMC

Numer części	H02N60I

Szczegółowy opis	N-Channel Power Field Effect Transistor

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Producent	HSMC [Hi-Sincerity Mocroelectronics]

Strona internetowa	http://www.hsmc.com.tw

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HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200403

Issued Date : 2004.07.01

Revised Date : 2005.07.14

Page No. : 2/6

H02N60I, H02N60J, H02N60E, H02N60F

HSMC Product Specification

Thermal Characteristics

Symbol

Parameter

Value

Units

TO-251 / TO-252

2

TO-220AB

2

RθJC

Thermal Resistance Junction to Case Max.

TO-220FP

3.3

°C/W

RθJA

Thermal Resistance Junction to Ambient Max.

62.5

°C/W

ELectrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol

Characteristic

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-Source Breakdown Voltage (V

GS=0V, ID=250uA)

600

-

V

Drain-Source Leakage Current (V

DS=600V, VGS=0V)

-

1

uA

I

DSS

Drain-Source Leakage Current (V

DS=480V, VGS=0V, Tj=125°C)

-

50

uA

I

GSSF

Gate-Source Leakage Current-Forward (V

gsf=20V, VDS=0V)

-

100

nA

I

GSSR

Gate-Source Leakage Current-Reverse (V

gsr=-20V, VDS=0V)

-

-100

nA

V

GS(th)

Gate Threshold Voltage (V

DS=VGS, ID=250uA)

2

-

4

V

R

DS(on)

Static Drain-Source On-Resistance (V

GS=10V, ID=1A)*

-

4.4

Ω

g

FS

Forward Transconductance (V

DS≥50V, ID=1A)*

1

-

mhos

C

iss

Input Capacitance

-

435

-

C

oss

Output Capacitance

-

56

-

C

rss

Reverse Transfer Capacitance

V

GS=0V, VDS=25V, f=1MHz

-9.2

-

pF

t

d(on)

Turn-on Delay Time

-

12

-

t

r

Rise Time

-

21

-

t

d(off)

Turn-off Delay Time

-

30

-

t

f

Fall Time

(V

DD=300V, ID=2A, RG=18Ω,

V

GS=10V)*

-24

-

ns

Q

g

Total Gate Charge

-

13

22

Q

gs

Gate-Source Charge

-

2

-

Q

gd

Gate-Drain Charge

(V

DS=300V, ID=6A, VGS=10V)*

-6

-

nC

L

D

Internal Drain Inductance (Measured from the drain lead 0.25” from

package to center of die)

-4.5

-

nH

L

S

Internal Drain Inductance (Measured from the drain lead 0.25” from

package to source bond pad)

-7.5

-

nH

*: Pulse Test: Pulse Width

≤300us, Duty Cycle≤2%

Source-Drain Diode

Symbol

Characteristic

Min.

Typ.

Max.

Units

V

SD

Forward On Voltage(1)

I

S=2A, VGS=0V, TJ=25

oC-

-

1.6

V

t

on

Forward Turn-On Time

-

**

-

ns

t

rr

Reverse Recovery Time

I

S=2A, VGS=0V, dIS/dt=100A/us

-

340

-

ns

**: Negligible, Dominated by circuit inductance

Podobny numer części - H02N60I

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