BCW30LT1 datasheet(2/8 Pages) ONSEMI

Numer części	BCW30LT1

Szczegółowy opis	General Purpose Transistors(PNP Silicon)

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BCW30LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –2.0 mAdc, IE = 0)

V(BR)CEO

–32

—

Vdc

Collector–Emitter Breakdown Voltage

(IC = –100 µAdc, VEB = 0)

V(BR)CES

–32

—

Vdc

Collector–Base Breakdown Voltage

(IC = –10 µAdc, IC = 0)

V(BR)CBO

–32

—

Vdc

Emitter–Base Breakdown Voltage

(IE = –10 µAdc, IC = 0)

V(BR)EBO

–5.0

—

Vdc

Collector Cutoff Current

(VCB = –32 Vdc, IE = 0)

(VCB = –32 Vdc, IE = 0, TA = 100°C)

ICBO

—

–100

–10

nAdc

µAdc

ON CHARACTERISTICS

DC Current Gain

(IC = –2.0 mAdc, VCE = –5.0 Vdc)

hFE

215

500

—

Collector–Emitter Saturation Voltage

(IC = –10 mAdc, IB = –0.5 mAdc)

VCE(sat)

—

–0.3

Vdc

Base–Emitter On Voltage

(IC = –2.0 mAdc, VCE = –5.0 Vdc)

VBE(on)

–0.6

–0.75

Vdc

SMALL–SIGNAL CHARACTERISTICS

Output Capacitance

(IE = 0, VCB = –10 Vdc, f = 1.0 MHz)

Cobo

—

7.0

pF

Noise Figure

(IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

NF

—

10

dB

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