BCW33LT1 datasheet(5/8 Pages) ONSEMI

Numer części	BCW33LT1

Szczegółowy opis	General Purpose Transistor(NPN Silicon)?

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BCW33LT1

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TYPICAL DYNAMIC CHARACTERISTICS

Figure 12. Turn-On Time

IC, COLLECTOR CURRENT (mA)

300

Figure 13. Turn-Off Time

IC, COLLECTOR CURRENT (mA)

2.0

5.0

10

20

30

50

1000

Figure 14. Current-Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

Figure 15. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

3.0

1.0

500

0.5

10

3.0

5.0

7.0

10

20

30

50

70

100

200

7.0

70 100

VCC = 3.0 V

IC/IB = 10

TJ = 25°C

td @ VBE(off) = 0.5 Vdc

tr

10

20

30

50

70

100

200

300

500

700

2.0

5.0

10

20

30

50

3.0

1.0

7.0

70 100

VCC = 3.0 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

ts

tf

50

70

100

200

300

0.7 1.0

2.0

3.0

5.0 7.0 10

20

30

50

TJ = 25°C

f = 100 MHz

VCE = 20 V

5.0 V

1.0

2.0

3.0

5.0

7.0

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

0.05

TJ = 25°C

f = 1.0 MHz

Cib

Cob

Figure 16. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100 200

500 1.0k 2.0k

5.0k 10k 20k 50k 100k

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1 (SEE AN-569)

ZqJA(t) = r(t) w RqJA

TJ(pk) - TA = P(pk) ZqJA(t)

t1

t2

P(pk)

FIGURE 19A

Podobny numer części - BCW33LT1

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