BF421 datasheet(2/4 Pages) ONSEMI

Numer części	BF421

Szczegółowy opis	High Voltage Transistors(PNP Silicon)

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BF421 BF423

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –25 mA, VCE = –20 Vdc)

BF421

BF423

hFE

50

—

Collector – Emitter Saturation Voltage

(IC = –20 mAdc, IB = –2.0 mAdc)

VCE(sat)

—

–0.5

Vdc

Base – Emitter Saturation Voltage

(IC = –20 mA, IB = –2.0 mA)

VBE(sat)

—

–2.0

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –10 Vdc, f = 20 MHz)

fT

60

—

MHz

Common Emitter Feedback Capacitance

(VCB = –30 Vdc, IE = 0, f = 1.0 MHz)

Cre

—

2.8

pF

Podobny numer części - BF421

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Motorola, Inc	BF421	119Kb / 4P	High Voltage Transistors(PNP)
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Infineon Technologies A...	BFN25	48Kb / 5P	PNP Silicon High-Voltage Transistors Nov-30-2001
ON Semiconductor	MPSA92	86Kb / 4P	High Voltage Transistors(PNP Silicon) 1998 REV 1
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