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STP8NK85Z Arkusz danych(PDF) 5 Page - STMicroelectronics

Numer części STP8NK85Z
Szczegółowy opis  N-CHANNEL 850V -1.1ohm - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP8NK85Z Arkusz danych(HTML) 5 Page - STMicroelectronics

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STP8NK85Z - STF8NK85Z
Electrical characteristics
5/15
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown voltage
ID =1MA, VGS = 0
850
V
IDSS
Zero Gate voltage
Drain current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125°C
1
50
µA
µA
IGSS
Gate-body leakage
Current (VDS = 0)
VGS = ± 20 V
± 10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 µA
33.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 3.35 A
1.1
1.4
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS = 15v, ID = 3.35 A
6
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
1870
190
44
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Equivalent output
capacitance
VDS =0V, VDS = 0V to 680V
75
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 425 V, ID = 3.35 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
26
19
58
18
ns
ns
ns
ns
tr(Voff)
tr
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 680 V, ID = 6.7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20)
12
10
24
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 680 V, ID = 6.7 A,
VGS = 10 V
(see Figure 19)
60
12
35
84
nC
nC
nC


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