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SI7921DN Arkusz danych(PDF) 1 Page - Vishay Siliconix

Numer części SI7921DN
Szczegółowy opis  Dual P-Channel 30-V (D-S) MOSFET
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7921DN Arkusz danych(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si7921DN
New Product
Document Number: 72341
S-51210–Rev. B, 27-Jun-05
www.vishay.com
1
Dual P-Channel 30-V (D-S) MOSFET
FEATURES
•TrenchFET® Power MOSFETS
New Low Thermal Resistance PowerPAK®
Package
APPLICATIONS
Portable
– Battery Switch
– Load Switch
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)ID (A)
–30
0.063 @ VGS = –10 V
–5.1
0.110 @ VGS = –4.5 V
–3.8
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
3.30 mm
3.30 mm
PowerPAK 1212-8
Bottom View
Ordering Information: Si7921DN-T1
Si7921DN–T1–E3 (Lead (Pb)–free)
P-Channel MOSFET
S1
D1
G1
P-Channel MOSFET
S2
D2
G2
Notes
a. Surface Mounted on 1“ x 1“ FR4 Board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply
ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
–30
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current (TJ = 150°C)
a
TA = 25°C
ID
–5.1
–3.7
A
TA = 85°C
–3.7
–2.7
Pulsed Drain Current
IDM
–20
Continuous Source Current (Diode Conduction)a
IS
–2.1
–1.1
Maximum Power Dissipationa
TA = 25°C
PD
2.5
1.3
W
TA = 85°C
1.3
0.85
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
°C
Soldering Recommendations (Peak Temperature)b,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t
≤ 10 sec
RthJA
40
50
°C/W
Steady State
75
94
Maximum Junction-to-Case
Steady State
RthJC
5.6
7
Available
Pb-free
RoHS*
COMPLIANT


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