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TPC6004 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TPC6004 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPC6004 2004-07-06 3 Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 24 A Forward voltage (Diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.2 V Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1. (a) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) (b) FR-4 25.4 × 25.4 × 0.8 Unit: (mm) |
Podobny numer części - TPC6004 |
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Podobny opis - TPC6004 |
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