KMM5321204C2W datasheet(3/17 Pages) SAMSUNG

Numer części	KMM5321204C2W

Szczegółowy opis	1Mx32 DRAM SIMM (1MX16 Base)

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Producent	SAMSUNG [Samsung semiconductor]

Strona internetowa	http://www.samsung.com/Products/Semiconductor

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DRAM MODULE

KMM5321204C2W/C2WG

Rev. 0.0 (Nov. 1997)

- 3 -

KMM5321204C2W/C2WG Fast Page Mode with Extended Data Out

1M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V

The Samsung KMM5321204C2W is a 1Mx32bits Dynamic

RAM

high

density

memory

module.

The

Samsung

KMM5321204C2W consists of two CMOS 1Mx16bits DRAMs

in 42-pin SOJ package mounted on a 72-pin glass-epoxy sub-

strate. A 0.1 or 0.22uF decoupling capacitor is mounted on

the

printed

circuit

board

for

each

DRAM.

The

KMM5321204C2W is a Single In-line Memory Module with

edge connections and is intended for mounting into 72 pin

edge connector sockets.

• Part Identification

- KMM5321204C2W(1024 cycles/16ms Ref, SOJ, Solder)

- KMM5321204C2WG(1024 cycles/16ms Ref, SOJ, Gold)

• Fast Page Mode with Extended Data Out

• CAS-before- RAS refresh capability

• RAS-only and hidden refresh capability

• TTL compatible inputs and outputs

• Single +5V

±10% power supply

• JEDEC standard PDPin & pinout

• PCB : Height(750mil), single sided component

GENERAL DESCRIPTION

FEATURES

PERFORMANCE RANGE

Speed

tRAC

tCAC

tRC

tHPC

-5

50ns

15ns

90ns

25ns

-6

60ns

17ns

110ns

30ns

PIN NAMES

Pin Name

Function

A0 - A9

Address Inputs

DQ0 - DQ31

Data In/Out

W

Read/Write Enable

RAS0

Row Address Strobe

CAS0 - CAS3

Column Address Strobe

PD1 -PD4

Presence Detect

Vcc

Power(+5V)

Vss

Ground

NC

No Connection

Res

Reserved Pin

PRESENCE DETECT PINS (Optional)

* Pin connection changing available

50NS

60NS

PD1

PD2

PD3

PD4

Vss

NC

PIN CONFIGURATIONS

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

Symbol

VSS

DQ0

DQ16

DQ1

DQ17

DQ2

DQ18

DQ3

DQ19

Vcc

NC

A0

A1

A2

A3

A4

A5

A6

Res(A10)

DQ4

DQ20

DQ5

DQ21

DQ6

DQ22

DQ7

DQ23

A7

Res(A11)

Vcc

A8

A9

Res(RAS1)

RAS0

NC

37

38

39

40

41

42

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

61

62

63

64

65

66

67

68

69

70

71

72

Symbol

NC

Vss

CAS0

CAS2

CAS3

CAS1

RAS0

Res(RAS1)

NC

W

NC

DQ8

DQ24

DQ9

DQ25

DQ10

DQ26

DQ11

DQ27

DQ12

DQ28

Vcc

DQ29

DQ13

DQ30

DQ14

DQ31

DQ15

NC

PD1

PD2

PD3

PD4

NC

Vss

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

Podobny numer części - KMM5321204C2W

Producent	Numer części	Arkusz danych	Szczegółowy opis
Samsung semiconductor	KMM5321200C2W	277Kb / 17P	1Mx32 DRAM SIMM (1MX16 Base)
Samsung semiconductor	KMM5321200C2WG	277Kb / 17P	1Mx32 DRAM SIMM (1MX16 Base)

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Podobny opis - KMM5321204C2W

Producent	Numer części	Arkusz danych	Szczegółowy opis
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	KMM5362203C2W	284Kb / 17P	2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
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