KMM53232004BKG datasheet(1/19 Pages) SAMSUNG

Numer części	KMM53232004BKG

Szczegółowy opis	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

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Producent	SAMSUNG [Samsung semiconductor]

Strona internetowa	http://www.samsung.com/Products/Semiconductor

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DRAM MODULE

KMM53232004BK/BKG

KMM53232004BK/BKG EDO Mode

32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

The Samsung KMM53232004B is a 32Mx32bits

Dynamic

RAM

high

density

memory

module.

The

Samsung

KMM53232004B

consists

of

sixteen

CMOS

16Mx4bits

DRAMs in SOJ packages mounted on a 72-pin glass-epoxy

substrate. A 0.1 or 0.22uF decoupling capacitor is mounted

on

the

printed

circuit

board

for

each

DRAM.

The

KMM53232004B is a Single In-line Memory Module with edge

connections and is intended for mounting into 72 pin edge

connector sockets.

• Part Identification

- KMM53232004BK(4K cycles/64ms Ref, SOJ, Solder)

- KMM53232004BKG(4K cycles/64ms Ref, SOJ, Gold)

• Extended Data Out Mode Operation

• CAS-before-RAS & Hidden Refresh capability

• RAS-only refresh capability

• TTL compatible inputs and outputs

• Single +5V

±10% power supply

• JEDEC standard PDpin & pinout

• PCB : Height(1420mil), double sided component

GENERAL DESCRIPTION

FEATURES

PERFORMANCE RANGE

Speed

tRAC

tCAC

tRC

tHPC

-5

50ns

13ns

84ns

20ns

-6

60ns

15ns

104ns

25ns

PIN NAMES

Pin Name

Function

A0 - A11

Address Inputs

DQ0-7, DQ9-16

DQ18-25, DQ27-34

Data In/Out

W

Read/Write Enable

RAS0 - RAS3

Row Address Strobe

CAS0 - CAS3

Column Address Strobe

PD1 -PD4

Presence Detect

Vcc

Power(+5V)

Vss

Ground

NC

No Connection

PRESENCE DETECT PINS (Optional)

50NS

60NS

PD1

PD2

PD3

PD4

NC

Vss

NC

Vss

NC

PIN CONFIGURATIONS

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

Symbol

VSS

DQ0

DQ18

DQ1

DQ19

DQ2

DQ20

DQ3

DQ21

Vcc

NC

A0

A1

A2

A3

A4

A5

A6

A10

DQ4

DQ22

DQ5

DQ23

DQ6

DQ24

DQ7

DQ25

A7

A11

Vcc

A8

A9

RAS3

RAS2

NC

37

38

39

40

41

42

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

61

62

63

64

65

66

67

68

69

70

71

72

Symbol

NC

Vss

CAS0

CAS2

CAS3

CAS1

RAS0

RAS1

NC

W

NC

DQ9

DQ27

DQ10

DQ28

DQ11

DQ29

DQ12

DQ30

DQ13

DQ31

Vcc

DQ32

DQ14

DQ33

DQ15

DQ34

DQ16

NC

PD1

PD2

PD3

PD4

NC

Vss

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

Podobny numer części - KMM53232004BKG

Producent	Numer części	Arkusz danych	Szczegółowy opis
Samsung semiconductor	KMM53232004CK	459Kb / 21P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
Samsung semiconductor	KMM53232004CKG	459Kb / 21P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

More results

Podobny opis - KMM53232004BKG

Producent	Numer części	Arkusz danych	Szczegółowy opis
Samsung semiconductor	KMM53232004CK	459Kb / 21P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53232000CK	412Kb / 20P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53232000BK	376Kb / 18P	32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53632004BK	434Kb / 19P	32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
	KMM53632004CK	475Kb / 21P	32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V
	KMM53632000CK	428Kb / 20P	32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
	KMM53632000BK	389Kb / 18P	32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
	KMM53216004CK	445Kb / 21P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53216000CK	397Kb / 20P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
	KMM53216004BK	409Kb / 19P	16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

More results

KMM53232004BKG Arkusz danych(PDF) 1 Page - Samsung semiconductor

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