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MC10EP58 Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części MC10EP58
Szczegółowy opis  2:1 Multiplexer
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MC10EP58 Arkusz danych(HTML) 2 Page - ON Semiconductor

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MC10EP58
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2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VEE
Power Supply (VCC = 0V)
–6.0 to 0
VDC
VCC
Power Supply (VEE = 0V)
6.0 to 0
VDC
VI
Input Voltage (VCC = 0V, VI not more negative than VEE)
–6.0 to 0
VDC
VI
Input Voltage (VEE = 0V, VI not more positive than VCC)
6.0 to 0
VDC
Iout
Output Current
Continuous
Surge
50
100
mA
TA
Operating Temperature Range
–40 to +85
°C
Tstg
Storage Temperature
–65 to +150
°C
θJA
Thermal Resistance (Junction–to–Ambient)
Still Air
500lfpm
190
130
°C/W
θJC
Thermal Resistance (Junction–to–Case)
41 to 44
± 5%
°C/W
Tsol
Solder Temperature (<2 to 3 Seconds: 245
°C desired)
265
°C
* Maximum Ratings are those values beyond which damage to the device may occur.
DC CHARACTERISTICS, ECL/LVECL (VCC = 0V; VEE = –5.5V to –3.0V) (Note 3.)
–40
°C
25
°C
85
°C
Symbol
Characteristic
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
IEE
Power Supply Current
(Note 1.)
20
28
37
20
30
39
22
31
40
mA
VOH
Output HIGH Voltage
(Note 2.)
–1135
–1060
–885
–1070
–945
–820
–1010
–885
–760
mV
VOL
Output LOW Voltage
(Note 2.)
–1935
–1810
–1685
–1870
–1745
–1620
–1810
–1685
–1560
mV
VIH
Input HIGH Voltage
Single Ended
–1210
–885
–1145
–820
–1085
–760
mV
VIL
Input LOW Voltage
Single Ended
–1935
–1610
–1870
–1545
–1810
–1485
mV
IIH
Input HIGH Current
150
150
150
µA
IIL
Input LOW Current
D
D
0.5
–150
0.5
–150
0.5
–150
µA
NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The
circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained.
1. VCC = 0V, VEE = VEEmin to VEEmax, all other pins floating.
2. All loading with 50 ohms to VCC–2.0 volts.
3. Input and output parameters vary 1:1 with VCC.


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