SI4503DY datasheet(6/7 Pages) VISHAY

Numer części	SI4503DY

Szczegółowy opis	N- and P-Channel MOSFET

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Si4503DY

Vishay Siliconix

New Product

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6

Document Number: 71770

S-20894—Rev. B, 17-Jun-02

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

P−CHANNEL

0.001

0

1

80

20

10

0.01

Single Pulse Power, Juncion-To-Ambient

Time (sec)

60

40

0.1

0

1

2

3

4

5

0

4

8

12

16

0.75

1.00

1.25

1.50

–50

–25

0

25

50

75

100

125

150

VDS = 4 V

ID = 4.5 A

VGS = 4.5 V

ID = 4.5 A

Gate Charge

Qg – Total Gate Charge (nC)

On-Resistance vs. Junction Temperature

TJ – Junction Temperature (_C)

–0.2

0.0

0.2

0.4

–50

–25

0

25

50

75

100

125

150

0.00

0.04

0.08

0.12

0.16

0.20

0

1234

5

0.00

0.25

0.50

0.75

1.00

1.25

1.50

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

VSD – Source-to-Drain Voltage (V)

VGS – Gate-to-Source Voltage (V)

TJ – Temperature (_C)

TJ = 150_C

TJ = 25_C

ID = 4.5 A

ID = 250 mA

20

1

10

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