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1N4446 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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1N4446 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 2 page 1N4446, Rev. A 1N4446 Small Signal Diode Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics DO-35 Color Band Denotes Cathode 2003 Fairchild Semiconductor Corporation Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Value Units V RRM Maximum Repetitive Reverse Voltage 100 V I F(AV) Average Rectified Forward Current 200 mA I FSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 A A T stg Storage Temperature Range -65 to +200 °C T J Operating Junction Temperature 175 °C Symbol Parameter Value Units P D Power Dissipation 500 mW RθJA Thermal Resistance, Junction to Ambient 300 °C/W Symbol Parameter Test Conditions Min Max Units V R Breakdown Voltage I R = 100 µA 100 V V F Forward Voltage I F = 20 mA 1.0 V I R Reverse Current V R = 20 V V R = 20 V, TA = 150°C 25 50 nA µA CT Total Capacitance VR = 0, f = 1.0 MHz 4 pF trr Reverse Recovery Time IF = 10 mA, VR = 6 V, RL = 100 Ω, Irr = 1.0 mA 4 ns |
Podobny numer części - 1N4446 |
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Podobny opis - 1N4446 |
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