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FDS6673AZ Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FDS6673AZ Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page 2 www.fairchildsemi.com FDS6673AZ Rev. C(W) Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –25 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA–1 –1.6 –3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 5.8 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –10 V, ID = –14.5 A VGS = –4.5 V, ID = –12 A VGS = –4.5 V, ID = –14.5A, TJ = 125°C 6.0 8.8 7.8 7.2 11 10.4 m Ω gFS Forward Transconductance VDS = –5 V, ID = –14.5 A 50 S Dynamic Characteristics Ciss Input Capacitance VDS = –15 V, VGS = 0 V, f = 1.0 MHz 4480 pF Coss Output Capacitance 1190 pF Crss Reverse Transfer Capacitance 615 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 3.8 Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 22 35 ns tr Turn–On Rise Time 816 ns td(off) Turn–Off Delay Time 134 214 ns tf Turn–Off Fall Time 79 126 ns Qg Total Gate Charge VDS = –15 V, ID = –14.5 A, VGS = –10 V 84 118 nC Qgs Gate–Source Charge 12 nC Qgd Gate–Drain Charge 19 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.7 –1.2 V tRR Reverse Recovery Time IF = –14.5 A, diF/dt = 100 A/µs (Note 2) 44 ns QRR Reverse Recovery Charge 29 nC a) 50°C/W (10 sec) 62.5° C/W steady state when mounted on a 1 in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. |
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