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FDS6673AZ Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FDS6673AZ
Szczegółowy opis  30 Volt P-Channel PowerTrench MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6673AZ Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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FDS6673AZ Rev. C(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
–30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C
–25
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –24 V, VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS = ±20 V, VDS = 0 V
±10
µA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA–1
–1.6
–3
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
5.8
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –10 V, ID = –14.5 A
VGS = –4.5 V, ID = –12 A
VGS = –4.5 V, ID = –14.5A, TJ = 125°C
6.0
8.8
7.8
7.2
11
10.4
m
gFS
Forward Transconductance
VDS = –5 V, ID = –14.5 A
50
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = –15 V, VGS = 0 V,
f = 1.0 MHz
4480
pF
Coss
Output Capacitance
1190
pF
Crss
Reverse Transfer Capacitance
615
pF
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
3.8
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
22
35
ns
tr
Turn–On Rise Time
816
ns
td(off)
Turn–Off Delay Time
134
214
ns
tf
Turn–Off Fall Time
79
126
ns
Qg
Total Gate Charge
VDS = –15 V, ID = –14.5 A,
VGS = –10 V
84
118
nC
Qgs
Gate–Source Charge
12
nC
Qgd
Gate–Drain Charge
19
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–2.1
A
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = –2.1 A
(Note 2)
–0.7
–1.2
V
tRR
Reverse Recovery Time
IF = –14.5 A,
diF/dt = 100 A/µs
(Note 2)
44
ns
QRR
Reverse Recovery Charge
29
nC
a) 50°C/W (10 sec) 62.5°
C/W steady state when
mounted on a 1 in2 pad
of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted
on a minimum pad.


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