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TS472 Arkusz danych(PDF) 4 Page - STMicroelectronics |
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TS472 Arkusz danych(HTML) 4 Page - STMicroelectronics |
4 / 20 page Electrical Characteristics TS472 4/20 3 Electrical Characteristics Table 4. VCC = 3V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit en Equivalent Input Noise Voltage Density REQ=100Ω at 1KHz 10 THD+N Total Harmonic Distortion + Noise 20Hz ≤ F≤ 20kHz, Gain=20dB, Vin=50mV RMS 0.1 % VIN Input Voltage, Gain=20dB 10 70 mVRMS BW Bandwidth @ -3dB Bandwidth @ -1dB pin A3, B3 floating 40 20 kHz G Overall Output Voltage Gain (Rgs variable) Minimum Gain, Rgs infinite Maximum Gain, Rgs=0 -3 39.5 -1.5 41 0 42.5 dB ZIN Input impedance referred to GND 80 100 120 k Ω RLOAD Resistive load 10 k Ω CLOAD Capacitive load 100 pF ICC Supply current, Gain=20dB 1.8 2.4 mA ISTANDBY Standby current 1 µA PSRR Power Supply Rejection Ratio, Gain=20dB, F=217Hz, Vripple=200mVpp, Inputs grounded Differential Output Single-Ended Outputs, -70 -46 dB Table 5. Bias output: VCC = 3V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit VOUT No load condition 1.9 2 2.1 V ROUT Output resistance 80 100 120 Ω IOUT Output Bias Current 2 mA PSRR Power Supply Rejection Ratio, F=217Hz, Vripple=200mVpp 70 80 dB nV Hz ------------ |
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