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TPCP8402 Arkusz danych(PDF) 3 Page - Toshiba Semiconductor |
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TPCP8402 Arkusz danych(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TPCP8402 2003-09-26 3 P-ch Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ±10 µA Drain cut-off current IDSS VDS = −30 V, VGS = 0 V 10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −30 Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V −15 V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 −2.0 V VGS = −4.5 V, ID = −1.7 A 80 105 Drain-source ON resistance RDS (ON) VGS = −10 V, ID = −1.7 A 60 72 m Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −1.7 A 3.0 6.0 S Input capacitance Ciss 600 Reverse transfer capacitance Crss 60 Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz 70 pF Rise time tr 5.3 Turn-on time ton 12 Fall time tf 8.4 Switching time Turn-off time toff Duty <= 1%, tw = 10 µs 34 ns Total gate charge (gate-source plus gate-drain) Qg 14 Gate-source charge 1 Qgs1 1.4 Gate-drain (“miller”) charge Qgd VDD ∼− −24 V, VGS = −10 V, ID = −3.4 A 2.7 nC Source-Drain Ratings and Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP −13.6 A Forward voltage (diode) VDSF IDR = −3.4 A, VGS = 0 V 1.2 V VDD ∼− −15 V − 10 V VGS 0 V ID = −1.7 A VOUT |
Podobny numer części - TPCP8402 |
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Podobny opis - TPCP8402 |
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