Zakładka z wyszukiwarką danych komponentów
  Polish  ▼
ALLDATASHEET.PL

X  

MJ10012 Arkusz danych(PDF) 2 Page - ON Semiconductor

Numer części MJ10012
Szczegółowy opis  POWER TRANSISTORS DARLINGTON NPN SILICON
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJ10012 Arkusz danych(HTML) 2 Page - ON Semiconductor

  MJ10012 Datasheet HTML 1Page - ON Semiconductor MJ10012 Datasheet HTML 2Page - ON Semiconductor MJ10012 Datasheet HTML 3Page - ON Semiconductor MJ10012 Datasheet HTML 4Page - ON Semiconductor MJ10012 Datasheet HTML 5Page - ON Semiconductor MJ10012 Datasheet HTML 6Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
MJ10012 MJH10012
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage (Figure 1)
(IC = 200 mAdc, IB = 0, Vclamp = Rated VCEO)
VCEO(sus)
400
Vdc
Collector–Emitter Sustaining Voltage (Figure 1)
(IC = 200 mAdc, RBE = 27 Ohms, Vclamp = Rated VCER)
VCER(sus)
425
Vdc
Collector Cutoff Current (Rated VCER, RBE = 27 Ohms)
ICER
1.0
mAdc
Collector Cutoff Current (Rated VCBO, IE = 0)
ICBO
1.0
mAdc
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
IEBO
40
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 6 0 Vdc)
(IC = 6.0 Adc, VCE = 6.0 Vdc)
(IC = 10 Adc, VCE = 6.0 Vdc)
hFE
300
100
20
550
350
150
2000
Collector–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.6 Adc)
(IC = 6.0 Adc, IB = 0.6 Adc)
(IC = 10 Adc, IB = 2.0 Adc)
VCE(sat)
1 5
2.0
2.5
Vdc
Base Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 0.6 Adc)
(IC = 10 Adc, IB = 2.0 Adc)
VBE(sat)
2.5
3.0
Vdc
Base Emitter On Voltage (IC = 10 Adc, VCE = 6.0 Vdc)
VBE(on)
2.8
Vdc
Diode Forward Voltage (IF = 10 Adc)
Vf
2.0
3.5
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
Cob
165
350
pF
SWITCHING CHARACTERISTICS
Storage Time
(VCC = 12 Vdc, IC = 6.0 Adc,
IB1 = IB2 = 0.3 Adc) Figure 2
ts
7 5
15
µs
Fall Time
(VCC = 12 Vdc, IC = 6.0 Adc,
IB1 = IB2 = 0.3 Adc) Figure 2
tf
5.2
15
µs
FUNCTIONAL TESTS
Second Breakdown Collector Current with
Base–Forward Biased
IS/B
See Figure 10
Pulsed Energy Test (See Figure 12)
IC2L/2
180
mJ
(1) Pulse Test: Pulse Width = 300
µs, Duty Cycle = 2%.
Vclamp
VCEO
25
µs
10 V
VCC [ 14 V
ADJUST UNTIL IC = 6 A
VCEO(sus) = 400 Vdc
VCER(sus) = 425 Vdc
VCC = 20 Vdc
Figure 1. Sustaining Voltage
Test Circuit
Figure 2. Switching Times
Test Circuit
* Adjust t1 such that IC reaches 200 mA at VCE = Vclamp
0 V
*
t1
5 ms
220
100
1N4933
2N3713
L = 10 mH
VCER
27
Vclamp
2
Eo
T.U.T.
– 4 V
[ 12 V
En
51
1N3947
225
µs
[ 12 V
0


Podobny numer części - MJ10012

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Mospec Semiconductor
MJ10012 MOSPEC-MJ10012 Datasheet
176Kb / 4P
   POWER TRANSISTORS(10A,400V,175W)
logo
Motorola, Inc
MJ10012 MOTOROLA-MJ10012 Datasheet
191Kb / 6P
   10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS
logo
Wing Shing Computer Com...
MJ10012 WINGS-MJ10012 Datasheet
23Kb / 1P
   NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)
logo
Boca Semiconductor Corp...
MJ10012 BOCA-MJ10012 Datasheet
183Kb / 4P
   NPN SILICON POWER DARLINGTON TRANSISTORS
logo
Central Semiconductor C...
MJ10012 CENTRAL-MJ10012 Datasheet
54Kb / 1P
   Power Transistors
More results

Podobny opis - MJ10012

ProducentNumer częściArkusz danychSzczegółowy opis
logo
ON Semiconductor
MJ10005 ONSEMI-MJ10005 Datasheet
229Kb / 8P
   NPN SILICON POWER DARLINGTON TRANSISTORS
REV 2
MJ10020 ONSEMI-MJ10020 Datasheet
293Kb / 8P
   NPN SILICON POWER DARLINGTON TRANSISTORS
1995
logo
Quanzhou Jinmei Electro...
2SD2439 JMNIC-2SD2439_15 Datasheet
88Kb / 3P
   Silicon NPN Darlington Power Transistors
2SD1895_2015 JMNIC-2SD1895_2015 Datasheet
98Kb / 3P
   Silicon NPN Darlington Power Transistors
logo
Inchange Semiconductor ...
2SD2386 ISC-2SD2386 Datasheet
83Kb / 3P
   Silicon NPN Darlington Power Transistors
logo
Quanzhou Jinmei Electro...
2SD1895 JMNIC-2SD1895 Datasheet
98Kb / 3P
   Silicon NPN Darlington Power Transistors
logo
Savantic, Inc.
2SC3144 SAVANTIC-2SC3144 Datasheet
99Kb / 3P
   Silicon NPN Darlington Power Transistors
2SC3146 SAVANTIC-2SC3146 Datasheet
96Kb / 3P
   Silicon NPN Darlington Power Transistors
2SD2386 SAVANTIC-2SD2386 Datasheet
126Kb / 3P
   Silicon NPN Darlington Power Transistors
2SD2439 SAVANTIC-2SD2439 Datasheet
142Kb / 3P
   Silicon NPN Darlington Power Transistors
2SD2560 SAVANTIC-2SD2560 Datasheet
147Kb / 3P
   Silicon NPN Darlington Power Transistors
More results


Html Pages

1 2 3 4 5 6


Arkusz danych Pobierz

Go To PDF Page


Link URL




Polityka prywatności
ALLDATASHEET.PL
Czy Alldatasheet okazała się pomocna?  [ DONATE ] 

O Alldatasheet   |   Reklama   |   Kontakt   |   Polityka prywatności   |   Linki   |   Lista producentów
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com