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MJ11021 Arkusz danych(PDF) 2 Page - ON Semiconductor |
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2 / 6 page MJ11017 MJ11021 MJ11018 MJ11022 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 0. 1 Adc, IB = 0) MJ11017, MJ11018 MJ11021, MJ11022 VCEO(sus) 150 250 — — Vdc Collector Cutoff Current (VCE = 75, IB = 0) MJ11017, MJ11018 (VCE = 125, IB = 0) MJ11021, MJ11022 ICEO — — 1.0 1.0 mAdc Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C) ICEV — — 0.5 5.0 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 2.0 mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) hFE 400 100 15,000 — — Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA) (IC = 15 Adc, IB = 150 mA) VCE(sat) — — 2.0 3.4 Vdc Base–Emitter On Voltage IC = 10 A, VCE = 5.0 Vdc) VBE(on) — 2.8 Vdc Base–Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA) VBE(sat) — 3.8 Vdc DYNAMIC CHARACTERISTICS Current–Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) [hfe] 3.0 — Mhz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJ11018, MJ11022 MJ11017, MJ11021 Cob — — 400 600 pF Small–Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) hfe 75 — — SWITCHING CHARACTERISTICS Typical Characteristic Symbol NPN PNP Unit Delay Time (VCC = 100 V, IC = 10 A, IB = 100 mA VBE(off) = 50 V) (See Figure 2.) td 150 75 ns Rise Time (VCC = 100 V, IC = 10 A, IB = 100 mA VBE(off) = 50 V) (See Figure 2.) tr 1.2 0.5 µs Storage Time (VCC = 100 V, IC = 10 A, IB = 100 mA VBE(off) = 50 V) (See Figure 2.) ts 4.4 2.7 µs Fall Time tf 10.0 2.5 µs (1) Pulsed Test: Pulse Width = 300 µs, Duty Cycle v 2%. Figure 2. Switching Times Test Circuit V2 APPROX +12 V V1 APPROX – 8.0 V 0 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 25 µs RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA VCC 100 V RC SCOPE TUT RB D1 51 + 4.0 V ≈ 10 K ≈ 8.0 for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse diode and voltage polarities. |
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