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TS90135CW Arkusz danych(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Numer części TS90135CW
Szczegółowy opis  500mA CMOS Low Dropout Voltage Regulator
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Producent  TSC [Taiwan Semiconductor Company, Ltd]
Strona internetowa  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TS90135CW Arkusz danych(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  TS90135CW Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd TS90135CW Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd TS90135CW Datasheet HTML 3Page - Taiwan Semiconductor Company, Ltd  
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TS9013 series
2-3
2004/09 rev. E
Absolute Maximum Rating
Input Supply Voltage
Vin(max.)
+12
Input Operating Voltage
Vin(opr. Typ.)
+10
V
Output Current
Io
PD / (Vin – Vo)
V
SOT-89
0. 55
Power Dissipation (without heat sink)
SOT-223
PD
0.625
W
SOT-89
180
Thermal Resistance
SOT-223
RӨja
160
oC/W
SOT-89
18
Thermal Resistance
SOT-223
RӨjc
15
oC/W
Operating Junction Temperature Range
Tj
-40 ~ +125
oC
Storage Temperature Range
TSTG
-65 ~ +150
oC
Lead Soldering Temperature (260
oC)
10
S
Caution: Stress above the listed absolute rating may cause permanent damage to the device.
Electrical Characteristics
Ta = 25
oC unless otherwise specified.
Parameter
Conditions
Min
Typ
Max
Unit
TS90135
4.900
5.0
5.100
TS9013S
3.234
3.3
3.366
TS9013K
2.450
2.5
2.550
TS9013D
1.764
1.8
1.836
Output Voltage
Vin=Vo + 1V, Io
=10mA,
TS9013A
1.47
1.5
1.575
V
Maximum Output Current
Vin=Vo+1V,
500
--
--
mA
Input Stability
Vo+1V
≤ Vin ≤ Vo+2V, Io=1mA
--
0.2
0.3
%
TS90135
Vin=Vo+1V,
1mA
≤IL≤500mA
TS9013S
--
40
80
TS9013K
TS9013D
Load Regulation (Note1)
Vin=Vo+1V,
1mA
≤IL≤400mA
TS9013A
--
40
90
mV
TS90135
--
600
750
Io=500mA
TS9013S
--
600
750
TS9013K
--
600
850
TS9013D
--
600
850
Dropout Voltage (Note 2)
Io=400mA
TS9013A
--
850
1100
mV
Quiescent Current
Vin=Vo+1V, Io=0A
--
2
5
uA
Output Current Limit
Vout < 0.4V
--
550
--
mA
Power Supply Rejection Ratio
At f=100KHz, Io=10mA,
--
30
--
dB
Output Voltage Temperature
Coefficient (Note 3)
--
100
--
ppm/
oC
Note: 1. Regulation is measured at constant junction temperature, using pulsed ON time.
2. Dropout is measured at constant junction temperature, using pulsed ON time, and the criterion is Vout inside
target value +/-2%.
3. Guaranteed by design.


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