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TSC2411D Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Numer części TSC2411D
Szczegółowy opis  General Purpose Dual NPN Transistor
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Producent  TSC [Taiwan Semiconductor Company, Ltd]
Strona internetowa  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC2411D Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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TSC2411D
1-1
2004/06 rev. A
TSC2411D
General Purpose Dual NPN Transistor
BVCEO = 40V
Ic = 600mA
VCE (SAT), = 0.2V(typ.) @Ic / Ib = 500mA / 50mA
Ordering Information
Part No.
Packing
Package
Marking
TSC2411DCU6
3kpcs / reel SOT-363
1PR
Features
Two TSC2411 chips in a STO-363 package
Transistor elements are independent, eliminating
interference
Optimal for low voltage operation
Structure
Epitaxial planar type.
Mounting possible with SOT-323 automatic mounting
machines.
Complementary to TSA1036DCU6
Absolute Maximum Rating (Ta = 25
oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
60V
V
Collector-Emitter Voltage
VCEO
40V
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
0.6
A
Collector Power Dissipation (note)
PD
200 (total)
mW
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TSTG
- 55 to +150
oC
Note: 1. 150mW per element must not be exceeded.
Electrical Characteristics (Ta = 25
oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base Voltage
IC = 100uA, IE = 0
BVCBO
60
--
--
V
Collector-Emitter Breakdown Voltage
IC = 1mA, IB = 0
BVCEO
40
--
--
V
Emitter-Base Breakdown Voltage
IE = 10uA, IC = 0
BVEBO
6
--
--
V
Collector Cutoff Current
VCE = 35V, VEB = 0.4V
ICE
--
--
0.1
uA
Collector-Emitter Saturation Voltage
IC / IB = 150mA / 15mA
VCE(SAT)1
--
--
0.4
V
Collector-Emitter Saturation Voltage
IC / IB = 500mA / 50mA
VCE(SAT)2
--
0.20
0.75
V
VCE = 1V, IC = 100uA
hFE 1
20
--
--
VCE = 1V, IC = 1mA
hFE 2
40
--
--
VCE = 1V, IC = 10mA
hFE 3
80
--
--
VCE = 1V, IC = 150mA
hFE 4
82
--
390
DC Current Transfer Ratio
VCE = 2V, IC = 500mA
hFE 5
40
--
--
Transition Frequency
VCE =5V, IC=20mA, f=100MHz
fT
--
250
--
MHz
Output Capacitance
VCB = 5V, f=1MHz
Cob
--
6
--
pF
Note : pulse test: pulse width <=380uS, duty cycle <=2%
Pin assignment:
1. Emitter 1
2. Base 1
3. Collector 2
6. Collector 1
5. Base 2
4. Emitter 2


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