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TSC5304DCH Arkusz danych(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Numer części TSC5304DCH
Szczegółowy opis  High Voltage NPN Transistor with Diode
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Producent  TSC [Taiwan Semiconductor Company, Ltd]
Strona internetowa  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC5304DCH Arkusz danych(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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Preliminary
TS5304D Preliminary
2-2
2004/09 rev. A
Electrical Characteristics
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 1mA, IB = 0
BVCBO
750
--
--
V
Collector-Emitter Breakdown Voltage
IC = 5mA, IE = 0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
BVEBO
9
--
--
V
Collector Cutoff Current
VCB = 500V, IE = 0
ICBO
--
--
10
uA
Emitter Cutoff Current
VEB = 9V, IC = 0
IEBO
--
--
10
uA
Collector-Emitter Saturation Voltage
IC / IB = 1.0A / 0.2A
IC / IB = 2.0A / 0.5A
IC / IB = 4.0A / 1.0A
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
--
--
--
--
--
--
0.35
0.55
1.25
V
Base-Emitter Saturation Voltage
IC / IB = 1.0A / 0.2A
IC / IB = 2.0A / 0.5A
VCB(SAT)1
VCB(SAT)2
--
--
--
--
1.0
1.1
V
DC Current Gain
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 2A
hFE 1
hFE 2
15
10
20
--
--
--
Turn On Time
tON
--
--
0.5
uS
Storage Time
tSTG
--
--
3
uS
Fall Time
VCC = 250V, IC = 2A,
IB1 = IB2 = 0.4A, tp= 25uS
Duty cycle < 1%
tF
--
--
0.2
uS
Doide
Fall Time
IC = 2A
tF
--
--
500
nS
Forward Voltage
IC = 2A
Vf
--
--
1.3
V
Note : pulse test: pulse width <=300uS, duty cycle <=2%


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