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TSC5305D Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Numer części TSC5305D
Szczegółowy opis  High Voltage NPN Transistor with Diode
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Producent  TSC [Taiwan Semiconductor Company, Ltd]
Strona internetowa  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC5305D Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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Preliminary
TS5305D Preliminary
1-1
2004/09 rev. B
TSC5305D
High Voltage NPN Transistor with Diode
BVCEO = 400V
BVCBO = 750V
Ic = 5A
VCE (SAT), = 1.2V @ Ic / Ib = 4A / 1A
Ordering Information
Part No.
Packing
Package
TSC5305DCZ
Tube
TO-220
TSC5305DCM
T&R
TO-263
Features
Built-in free-wheeling diode makes efficient anti
saturation operation.
No need to interest an hfe value because of low variable
storage-time spread even though comer spirit product.
Low base drive requirement.
Suitable for half bridge light ballast applications.
Structure
Silicon triple diffused type.
NPN silicon transistor with Diode
Block Diagram
Absolute Maximum Rating (Ta = 25
oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
750V
V
Collector-Emitter Voltage
VCEO
400V
V
Emitter-Base Voltage
VEBO
10
V
DC
5
Collector Current
Pulse
IC
10
A
DC
2
Base Current
Pulse
IB
4
A
Total Power Dissipation (Tc=25
oC)
PD
75
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TSTG
- 65 to +150
oC
Thermal Resistance Junction to Case
RΘjc
1.65
oC/W
Thermal Resistance Junction to Ambient
RΘja
65
oC/W
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
Pin assignment:
1.
Base
2.
Collector
3.
Emitter
TO-263


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