NXP Semiconductors

TEA2095TE

GreenChip dual synchronous rectifier controller

TEA2095TE

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© NXP B.V. 2020. All rights reserved.

Product data sheet

Rev. 1.1 — 10 April 2020

10 / 19

9 Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Voltages

supply voltage

−0.4 +38

V

drain sense voltage A

DC

−0.8 +120 V

drain sense voltage B

DC

−0.8 +120 V

source sense voltage A

DC

−0.4 +0.4

V

source sense voltage B

DC

−0.4 +0.4

V

voltage on pin GDA

DC

[1] −0.4 +12.0 V

voltage on pin GDB

DC

[1] −0.4 +12.0 V

General

maximum frequency

-

1

MHz

storage temperature

−55

+150 °C

junction temperature

−40

+150 °C

Electrostatic discharge (ESD)

human body model (HBM)

[2] -

2000 V

electrostatic discharge

voltage

charged device model

(CDM)

[3] -

500

V

[1]

Output pin; not to be voltage driven

[2]

Human body model: Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.

[3]

Charged device model: Equivalent to charging the IC and discharging each pin over a 1 Ω resistor.

10 Recommended operating conditions

Table 5. Recommended operating conditions

Symbol

Parameter

Conditions

Min

Max

Unit

supply voltage

4.75

38

V

junction temperature

−40

+125

°C

11 Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from

junction to ambient

HSO8 package; PCB 4 layer;

4 vias; 0.4 mm; top/btm;

35 μm Cu; 60 mm x 125 mm;

exposed die pad soldered to

PCB

46

K/W

thermal resistance from

junction to case

HSO8 package

8

K/W