Zakładka z wyszukiwarką danych komponentów |
|
WSD2098 Arkusz danych(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
|
WSD2098 Arkusz danych(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
2 / 7 page Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.022 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V , ID= 5.5A --- m Ω VGS=2.5V , ID= 5.5A --- VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0. 5 0. 7 1. 0 V △ VGS(th) VGS(th) Temperature Coefficient --- -2.32 --- mV/℃ IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=16V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 65 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 11 --- Ω Qg Total Gate Charge (4.5V) VDS=1 0V , VGS=4.5V , ID=5.5A 10 23.2 15 nC Qgs Gate-Source Charge --- 1.9 --- Qgd Gate-Drain Charge --- 4.8 --- Td(on) Turn-On Delay Time VDD=10V , VGS= 10V , RG=1Ω, ID=1A ,RL=10Ω --- 8 --- ns Tr Rise Time --- 20 --- Td(off) Turn-Off Delay Time --- 935 --- Tf Fall Time --- 410 --- Ciss Input Capacitance VDS=1 0V , VGS=0V , f=1MHz 1470 pF Coss Output Capacitance 258 Crss Reverse Transfer Capacitance 202 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 2 A ISM Pulsed Source Current 2,4 --- --- 8 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- 0.7 1. 3 V trr Reverse Recovery Time IF=5.5A ,dI/dt=100A/µs , TJ=25℃ --- 445 --- nS Qrr Reverse Recovery Charge --- 2175 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper, t<10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics 7.0 9.0 13.5 10.5 WSD2098 Page 2 www.winsok.tw Dec.2014 Dual N-Ch MOSFET --- --- --- --- --- --- |
Podobny numer części - WSD2098 |
|
Podobny opis - WSD2098 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |