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Zakładka z wyszukiwarką danych komponentów |
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WSF7P20 Arkusz danych(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF7P20 Arkusz danych(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 4 page  Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -200 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.1 --- V/℃ VGS=-10V , ID=-2.85A --- 540 690 RDS(ON) Static Drain-Source On-Resistance mΩ VGS(th) Gate Threshold Voltage -2 -4 V △ VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =-250uA --- 4.08 --- mV/℃ VDS=-200V , VGS=0V , TJ=25℃ --- --- 1 IDSS Drain-Source Leakage Current VDS=-200V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=-40V , ID=-2.85A --- 3.7 --- S Qg Total Gate Charge (-4.5V) --- 19 25 Qgs Gate-Source Charge --- 4.6 --- Qgd Gate-Drain Charge VDS=-160V,VGS=-10V,ID=-7.3A --- 9.5 --- nC Td(on) Turn-On Delay Time --- 15 --- Tr Rise Time --- 110 --- Td(off) Turn-Off Delay Time --- 30 --- Tf Fall Time VDD=-100V , VGS=-10V . ID=-7.3A ,RG=25Ω. --- 42 --- ns Ciss Input Capacitance --- 590 --- Coss Output Capacitance --- 140 --- Crss Reverse Transfer Capacitance VDS=-25V , VGS=0V , f=1MHz --- 25 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current --- --- -5.7 A ISM Pulsed Source Current VG=VD=0V , Force Current --- --- -22.8 A VSD Diode Forward Voltage VGS=0V , IS=-5.7A , TJ=25℃ --- --- -5.0 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics WSF7P20 P-Ch MOSFET Page 2 www.winsok.tw Dec.2014 Note: 1. Pulse Test : Pulse width≦300μs, Duty cycle≦2% Note: 2. Essentially independent of operating temperature |
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Podobny opis - WSF7P20 |
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